All MOSFET. IRF7204TR Datasheet

 

IRF7204TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF7204TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 1700 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO8

 IRF7204TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF7204TR Datasheet (PDF)

 ..1. Size:2255K  cn vbsemi
 irf7204tr.pdf

IRF7204TR IRF7204TR

IRF7204TRwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

 7.1. Size:243K  international rectifier
 irf7204pbf.pdf

IRF7204TR IRF7204TR

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

 7.2. Size:145K  international rectifier
 irf7204.pdf

IRF7204TR IRF7204TR

PD - 9.1103BIRF7204HEXFET Power MOSFET Adavanced Process TechnologyA1 8S D Ultra Low On-ResistanceVDSS = -20V2 7 P-Channel MOSFETS D Surface Mount3 6S DRDS(on) = 0.060 Available in Tape & Reel45G D Dynamic dv/dt RatingID = -5.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced process

 7.3. Size:243K  infineon
 irf7204pbf.pdf

IRF7204TR IRF7204TR

PD - 95165IRF7204PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -20V2 7l Surface MountS Dl Available in Tape & Reel3 6S DRDS(on) = 0.060l Dynamic dv/dt Rating45G Dl Fast Switchingl Lead-Free ID = -5.3ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier util

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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