All MOSFET. IRF7241TR Datasheet

 

IRF7241TR Datasheet and Replacement


   Type Designator: IRF7241TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 10.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 64 nC
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01(typ) Ohm
   Package: SO8
 
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IRF7241TR Datasheet (PDF)

 ..1. Size:818K  cn vbsemi
 irf7241tr.pdf pdf_icon

IRF7241TR

IRF7241TRwww.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1

 7.1. Size:178K  international rectifier
 irf7241.pdf pdf_icon

IRF7241TR

PD- 94087IRF7241HEXFET Power MOSFET)))) Trench Technology VDSS RDS(on) max (m) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & ReelA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achieve ex

 7.2. Size:170K  international rectifier
 irf7241pbf.pdf pdf_icon

IRF7241TR

PD - 95294IRF7241PbFHEXFET Power MOSFET Trench Technology VDSS RDS(on) max (mW) ID Ultra Low On-Resistance-40V 41@VGS = -10V -6.2A P-Channel MOSFET70@VGS = -4.5V -5.0A Available in Tape & Reel Lead-FreeA1 8S DDescription2 7New trench HEXFET Power MOSFETs from DSInternational Rectifier utilize advanced processing3 6S Dtechniques to achie

 8.1. Size:229K  international rectifier
 irf7240.pdf pdf_icon

IRF7241TR

PD- 93916IRF7240HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET-40V 0.015@VGS = -10V -10.5A Surface Mount0.025@VGS = -4.5V -8.4A Available in Tape & ReelA1 8DescriptionS DThese P-Channel MOSFETs from International2 7S DRectifier utilize advanced processing techniques toachieve the extremely low on-resistance per silicon3 6

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