IRF7313QTR Specs and Replacement
Type Designator: IRF7313QTR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 117 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 typ Ohm
Package: SO8
IRF7313QTR substitution
- MOSFET ⓘ Cross-Reference Search
IRF7313QTR datasheet
irf7313q.pdf
PD - 96125 IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = 30V l Dual N- Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.029 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive appl... See More ⇒
irf7313qpbf.pdf
PD - 96125A IRF7313QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance 1 8 l Dual N- Channel MOSFET S1 D1 VDSS = 30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l 150 C Operating Temperature l Lead-Free 4 5 G2 D2 RDS(on) = 0.029 Description Top View These HEXFET Power MOSFET's in a Dual SO-8 package utilize the lastes... See More ⇒
auirf7313q.pdf
PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET Power MOSFET Features l Advanced Planar Technology l Dual N Channel MOSFET V(BR)DSS 30V 1 8 S1 D1 l Low On-Resistance 2 7 G1 D1 l Dynamic dV/dT Rating RDS(on) typ. 23m 3 6 S2 D2 l 175 C Operating Temperature max. 29m 4 5 l Fast Switching G2 D2 l Lead-Free, RoHS Compliant ID 6.9A Top View l Automotive Qualified* Des... See More ⇒
Detailed specifications: IRF7241TR, IRF7301TR, IRF7303TR, IRF7304QTR, IRF7306QTR, IRF7306TR, IRF7309TRPBF, IRF7311TR, 2N60, IRF7313TR, IRF7314TRPBF, IRF7317TR, IRF7319TR, IRF7321D2TRPBF, IRF7324TR, IRF7341TRPBF, IRF7342QTR
Keywords - IRF7313QTR MOSFET specs
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