2SK2414 Datasheet and Replacement

2SK2414www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2412SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2412 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 10 A)RDS(on)2 =

2SK2419External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 60 V V 60 V I = 100A, V = 0VDSS (BR) DSS D GSV 20 V I 100 nA V = 20VGSS GSS GSI 22 A I 100 A V = 60V, V = 0VD DSS DS GSI 88 A V 2.0 4.0 V V = 10V, I = 250AD (pulse) TH DS D

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2410SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2410 is N-Channel MOS Field Effect Transistor de-(in millimeters)signed for high speed switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)RDS(on)2 =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2413SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2413 is N-Channel MOS Field Effect Transistor de-(in millimeter)signed for high speed switching applications.FEATURES4.5 0.2 Low On-Resistance8.0 0.2RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A)RDS(on)2 = 95 m MAX. (@ VGS =

2SK2417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2417 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.42 (typ.) High forward transfer admittance : |Y | = 7.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5

2SK241 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK241 FM Tuner, VHF and RF Amplifier Applications Unit: mm Low reverse transfer capacitance: Crss = 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: GPS = 28dB (typ.) Recommend operation voltage: 5~15 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2415, 2SK2415-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2415 is N-Channel MOS Field Effect Transistor designed(in millimeters)for high voltage switching applications.2.3 0.26.5 0.25.0 0.2 0.5 0.1FEATURES4 Low On-ResistanceRDS(on)1 = 0.10 MAX. (@ VGS = 10 V, ID =

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2411, 2SK2411-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2411 is N-Channel MOS Field Effect Transistor designed(in millimeter)for high speed switching applications.4.8 MAX.10.6 MAX.3.6 0.21.3 0.2FEATURES10.0 Low On-ResistanceRDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A)

isc N-Channel MOSFET Transistor 2SK2417DESCRIPTIONDrain Current I = 7.5A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV