FCPF9N60NT Datasheet. Specs and Replacement

Type Designator: FCPF9N60NT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm

Package: TO220F

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FCPF9N60NT datasheet

 ..1. Size:906K  fairchild semi
 fcp9n60n fcpf9n60nt.pdf pdf_icon

FCPF9N60NT

August 2009 SupreMOSTM FCP9N60N / FCPF9N60NT tm N-Channel MOSFET 600V, 9A, 0.385 Features Description RDS(on) = 0.33 ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 22nC) process that differentiates it from preceding multi-epi based ... See More ⇒

 ..2. Size:753K  onsemi
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FCPF9N60NT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FCPF16N60NT, STU421S, FCPF22N60NT, STU420S, FCPF7N60, STU419S, FCPF7N60NT, STU419A, IRF1405, STU417S, FDA032N08, FDA15N65, FDA16N50F109, FDA18N50, FDA20N50F109, FDA20N50F, FDA24N40F

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs