FCPF9N60NT Datasheet and Replacement
Type Designator: FCPF9N60NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 29.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 22 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TO220F
FCPF9N60NT substitution
FCPF9N60NT Datasheet (PDF)
fcp9n60n fcpf9n60nt.pdf

August 2009SupreMOSTMFCP9N60N / FCPF9N60NTtmN-Channel MOSFET 600V, 9A, 0.385Features Description RDS(on) = 0.33 ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 22nC)process that differentiates it from preceding multi-epi based
fcp9n60n fcpf9n60nt.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRF624S
Keywords - FCPF9N60NT MOSFET datasheet
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History: IRF624S



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