FCPF9N60NT PDF Specs and Replacement
Type Designator: FCPF9N60NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 29.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
Package: TO220F
FCPF9N60NT substitution
FCPF9N60NT PDF Specs
fcp9n60n fcpf9n60nt.pdf
August 2009 SupreMOSTM FCP9N60N / FCPF9N60NT tm N-Channel MOSFET 600V, 9A, 0.385 Features Description RDS(on) = 0.33 ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 22nC) process that differentiates it from preceding multi-epi based ... See More ⇒
fcp9n60n fcpf9n60nt.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCPF16N60NT , STU421S , FCPF22N60NT , STU420S , FCPF7N60 , STU419S , FCPF7N60NT , STU419A , IRF1405 , STU417S , FDA032N08 , FDA15N65 , FDA16N50F109 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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