All MOSFET. IRF830ASTRL-FP Datasheet

 

IRF830ASTRL-FP MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF830ASTRL-FP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.86(typ) Ohm
   Package: TO220F

 IRF830ASTRL-FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF830ASTRL-FP Datasheet (PDF)

 3.1. Size:880K  cn vbsemi
 irf830astrl.pdf

IRF830ASTRL-FP IRF830ASTRL-FP

IRF830ASTRLwww.VBsemi.twN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd

 6.1. Size:155K  international rectifier
 irf830as.pdf

IRF830ASTRL-FP IRF830ASTRL-FP

PD- 92006ASMPS MOSFETIRF830AS/LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power SwitchingBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

 6.2. Size:676K  international rectifier
 irf830aspbf irf830alpbf.pdf

IRF830ASTRL-FP IRF830ASTRL-FP

PD- 95139SMPS MOSFETIRF830AS/LPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Vol

 6.3. Size:207K  vishay
 irf830alpbf irf830aspbf sihf830al sihf830as.pdf

IRF830ASTRL-FP IRF830ASTRL-FP

IRF830AS, IRF830AL, SiHF830AS, SiHF830ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) (Max.) ()VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 24RequirementQgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterize

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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