IRF830ASTRL-FP Specs and Replacement
Type Designator: IRF830ASTRL-FP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.86 typ Ohm
Package: TO220F
IRF830ASTRL-FP substitution
- MOSFET ⓘ Cross-Reference Search
IRF830ASTRL-FP datasheet
irf830astrl.pdf
IRF830ASTRL www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd... See More ⇒
irf830as.pdf
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre... See More ⇒
irf830aspbf irf830alpbf.pdf
PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Vol... See More ⇒
irf830alpbf irf830aspbf sihf830al sihf830as.pdf
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) (Max.) ( )VGS = 10 V 1.40 Low Gate Charge Qg Results in Simple Drive Qg (Max.) (nC) 24 Requirement Qgs (nC) 6.3 Improved Gate, Avalanche and Dynamic dV/dt Qgd (nC) 11 Ruggedness Fully Characterize... See More ⇒
Detailed specifications: IRF7811WTR, IRF7815TR, IRF7831TR, IRF7834TRPBF, IRF7842TR, IRF7905TR, IRF8010SP, IRF830ASTRL, IRF640N, IRF830P, IRF8721TR, IRF8736TR, IRF9310TRPBF-9, IRF9332TR, IRF9335TRPBF, IRF9389TR, IRF9530P
Keywords - IRF830ASTRL-FP MOSFET specs
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