IRFL210TRPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFL210TRPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.2(max) nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 53 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT223
IRFL210TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFL210TRPBF Datasheet (PDF)
irfl210trpbf.pdf
IRFL210TRPBFwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSD
irfl210pbf.pdf
PD- 95228IRFL210PbF Lead-Free04/28/04Document Number: 91193 www.vishay.com1IRFL210PbFDocument Number: 91193 www.vishay.com2IRFL210PbFDocument Number: 91193 www.vishay.com3IRFL210PbFDocument Number: 91193 www.vishay.com4IRFL210PbFDocument Number: 91193 www.vishay.com5IRFL210PbFDocument Number: 91193 www.vishay.com6IRFL210PbFDocument Number: 91
irfl210 sihfl210.pdf
IRFL210, SiHFL210Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200DefinitionRDS(on) ()VGS = 10 V 1.5 Surface MountQg (Max.) (nC) 8.2 Available in Tape and ReelQgs (nC) 1.8 Dynamic dV/dt RatingQgd (nC) 4.5 Repetitive Avalanche RatedConfiguration Single Fast Switching Ease of Parallelin
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
