FDA16N50F109
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDA16N50F109
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 205
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 16.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO3PN
FDA16N50F109
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDA16N50F109
Datasheet (PDF)
6.1. Size:824K fairchild semi
fda16n50.pdf 
April 2007TMUniFETFDA16N50500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to
6.2. Size:497K fairchild semi
fda16n50ldtu.pdf
August 2014FDA16N50LDTUN-Channel UniFETTM MOSFET500 V, 16.5 A, 380 mFeatures Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF)
6.3. Size:718K fairchild semi
fda16n50 f109.pdf
July 2007TMUniFETFDA16N50 / FDA16N50_F109500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especial
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