FDA16N50F109 Datasheet and Replacement. Cross Reference Search

FDA16N50F109 Datasheet (PDF)

6.1. Size:824K fairchild semi
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April 2007TMUniFETFDA16N50500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

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August 2014FDA16N50LDTUN-Channel UniFETTM MOSFET500 V, 16.5 A, 380 mFeatures Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF)

6.3. Size:718K fairchild semi
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July 2007TMUniFETFDA16N50 / FDA16N50_F109500V N-Channel MOSFETFeatures Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 32 nC)stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especial

Datasheet: FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , IRF1405 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 .