FDA16N50F109 - аналоги, параметры транзистора

FDA16N50F109 даташит

6.1. Size:824K fairchild semi
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April 2007 TM UniFET FDA16N50 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to

6.2. Size:497K fairchild semi
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August 2014 FDA16N50LDTU N-Channel UniFETTM MOSFET 500 V, 16.5 A, 380 m Features Description RDS(on) = 310 m (Typ.) @ VGS = 10 V, ID = 8.3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 32 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 20 pF)

6.3. Size:718K fairchild semi
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July 2007 TM UniFET FDA16N50 / FDA16N50_F109 500V N-Channel MOSFET Features Description 16.5A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especial

Другие MOSFET... FCPF7N60 , STU419S , FCPF7N60NT , STU419A , FCPF9N60NT , STU417S , FDA032N08 , FDA15N65 , IRF830 , FDA18N50 , FDA20N50F109 , FDA20N50F , FDA24N40F , STU402D , FDA24N50 , FDA24N50F , FDA28N50 .