All MOSFET. IRFR9024TR Datasheet

 

IRFR9024TR MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFR9024TR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061(typ) Ohm
   Package: TO252

 IRFR9024TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFR9024TR Datasheet (PDF)

 ..1. Size:830K  cn vbsemi
irfr9024tr.pdf

IRFR9024TR IRFR9024TR

IRFR9024TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

 6.1. Size:1347K  1
irfr9024ncpbf irfu9024ncpbf.pdf

IRFR9024TR IRFR9024TR

PD - 96048IRFR9024NCPbFIRFU9024NCPbF(IRFR9024NCPbF)(IRFU9024NCPbF) Lead-Freewww.irf.com 105/31/06IRFR/U9024NCPbF2 www.irf.comIRFR/U9024NCPbFwww.irf.com 3IRFR/U9024NCPbF4 www.irf.comIRFR/U9024NCPbFwww.irf.com 5IRFR/U9024NCPbF6 www.irf.comIRFR/U9024NCPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductanc

 6.2. Size:1384K  international rectifier
irfr9024npbf irfu9024npbf.pdf

IRFR9024TR IRFR9024TR

PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

 6.3. Size:1175K  international rectifier
irfr9024pbf.pdf

IRFR9024TR IRFR9024TR

PD- 95732AIRFR9024PbFIRFU9024PbF Lead-Freewww.irf.com 11/10/05IRFR/U9024PbF2 www.irf.comIRFR/U9024PbFwww.irf.com 3IRFR/U9024PbF4 www.irf.comIRFR/U9024PbFwww.irf.com 5IRFR/U9024PbF6 www.irf.comIRFR/U9024PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

 6.4. Size:1201K  international rectifier
irfr9024pbf irfu9024pbf.pdf

IRFR9024TR IRFR9024TR

PD- 95732AIRFR9024PbFIRFU9024PbF Lead-Free1/10/05Document Number: 91278 www.vishay.com1IRFR/U9024PbFDocument Number: 91278 www.vishay.com2IRFR/U9024PbFDocument Number: 91278 www.vishay.com3IRFR/U9024PbFDocument Number: 91278 www.vishay.com4IRFR/U9024PbFDocument Number: 91278 www.vishay.com5IRFR/U9024PbFDocument Number: 91278 www.vishay.com6IR

 6.5. Size:117K  international rectifier
irfr9024n.pdf

IRFR9024TR IRFR9024TR

PD - 9.1506IRFR/U9024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N)RDS(on) = 0.175 Advanced Process TechnologyG Fast SwitchingID = -11A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 6.6. Size:173K  international rectifier
irfr9024.pdf

IRFR9024TR IRFR9024TR

 6.7. Size:1968K  vishay
irfr9024 irfu9024 sihfr9024 sihfu9024.pdf

IRFR9024TR IRFR9024TR

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRFR9024/SiHFR9024)RoHS*COMPLIANTQg (Max.) (nC) 19 Straight Lead (IRFU9024/SiHFU9024)Qgs (nC) 5.4 Available in Tape and ReelQgd (nC) 11 P

 6.8. Size:1384K  infineon
irfr9024npbf irfu9024npbf.pdf

IRFR9024TR IRFR9024TR

PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

 6.9. Size:529K  infineon
auirfr9024n auirfu9024n.pdf

IRFR9024TR IRFR9024TR

AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

 6.10. Size:870K  cn vbsemi
irfr9024ntrpbf.pdf

IRFR9024TR IRFR9024TR

IRFR9024NTRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamete

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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