IRFR9024TR - описание и поиск аналогов

IRFR9024TR www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

PD - 96048 IRFR9024NCPbF IRFU9024NCPbF (IRFR9024NCPbF) (IRFU9024NCPbF) Lead-Free www.irf.com 1 05/31/06 IRFR/U9024NCPbF 2 www.irf.com IRFR/U9024NCPbF www.irf.com 3 IRFR/U9024NCPbF 4 www.irf.com IRFR/U9024NCPbF www.irf.com 5 IRFR/U9024NCPbF 6 www.irf.com IRFR/U9024NCPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductanc

PD - 95015A IRFR9024NPbF IRFU9024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U9024NPbF 2 www.irf.com IRFR/U9024NPbF www.irf.com 3 IRFR/U9024NPbF 4 www.irf.com IRFR/U9024NPbF www.irf.com 5 IRFR/U9024NPbF 6 www.irf.com IRFR/U9024NPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

PD- 95732A IRFR9024PbF IRFU9024PbF Lead-Free www.irf.com 1 1/10/05 IRFR/U9024PbF 2 www.irf.com IRFR/U9024PbF www.irf.com 3 IRFR/U9024PbF 4 www.irf.com IRFR/U9024PbF www.irf.com 5 IRFR/U9024PbF 6 www.irf.com IRFR/U9024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

PD- 95732A IRFR9024PbF IRFU9024PbF Lead-Free 1/10/05 Document Number 91278 www.vishay.com 1 IRFR/U9024PbF Document Number 91278 www.vishay.com 2 IRFR/U9024PbF Document Number 91278 www.vishay.com 3 IRFR/U9024PbF Document Number 91278 www.vishay.com 4 IRFR/U9024PbF Document Number 91278 www.vishay.com 5 IRFR/U9024PbF Document Number 91278 www.vishay.com 6 IR

PD - 9.1506 IRFR/U9024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) RDS(on) = 0.175 Advanced Process Technology G Fast Switching ID = -11A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRFR9024/SiHFR9024) RoHS* COMPLIANT Qg (Max.) (nC) 19 Straight Lead (IRFU9024/SiHFU9024) Qgs (nC) 5.4 Available in Tape and Reel Qgd (nC) 11 P

AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

IRFR9024NTRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramete