IRLML0030TR MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML0030TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23
IRLML0030TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML0030TR Datasheet (PDF)
irlml0030trpbf.pdf
PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
irlml0030trpbf.pdf
PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
irlml0030trpbf.pdf
Product specificationIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilit
irlml0030tr.pdf
IRLML0030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
irlml0030pbf.pdf
PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
irlml0030pbf-1.pdf
IRLML0030PbF-1HEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierM
irlml0040pbf.pdf
PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend
irlml0060pbf.pdf
PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml0040trpbf.pdf
PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend
irlml0060trpbf.pdf
PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml0040trpbf.pdf
PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend
irlml0060trpbf.pdf
PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
irlml0040trpbf.pdf
Product specificationIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout
irlml0060.pdf
IRLML0060 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The IRLML0060 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 3 A The IRLML0060 meet the RoHS and Green Product requirement with full function reliability a
irlml0040trpbf.pdf
IRLML0040TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-
irlml0060trpbf.pdf
IRLML0060TRPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23
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