IRLML0030TR
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRLML0030TR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.1
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 5.3
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 50
ns
Cossⓘ - Выходная емкость: 45
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03
Ohm
Тип корпуса:
SOT23
- подбор MOSFET транзистора по параметрам
IRLML0030TR
Datasheet (PDF)
..1. Size:191K international rectifier
irlml0030trpbf.pdf 

PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
..2. Size:162K tysemi
irlml0030trpbf.pdf 

Product specificationIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilit
..3. Size:1508K cn vbsemi
irlml0030tr.pdf 

IRLML0030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
5.1. Size:200K international rectifier
irlml0030pbf.pdf 

PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
5.2. Size:207K international rectifier
irlml0030pbf-1.pdf 

IRLML0030PbF-1HEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierM
7.1. Size:201K international rectifier
irlml0040pbf.pdf 

PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend
7.2. Size:218K international rectifier
irlml0060pbf.pdf 

PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
7.3. Size:192K international rectifier
irlml0040trpbf.pdf 

PD - 96309AIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout Multi-vend
7.4. Size:199K international rectifier
irlml0060trpbf.pdf 

PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie
7.5. Size:168K tysemi
irlml0040trpbf.pdf 

Product specificationIRLML0040TRPbFHEXFET Power MOSFETVDSSV40VGS Max 16 VG 1RDS(on) max56 m(@VGS = 10V)3 DRDS(on) max78 mS 2Micro3TM (SOT-23)(@VGS = 4.5V)IRLML0040TRPbFApplication(s) Load/ System Switch DC Motor DriveFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 56m) Lower switching lossesIndustry-standard pinout
7.6. Size:422K huashuo
irlml0060.pdf 

IRLML0060 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The IRLML0060 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 3 A The IRLML0060 meet the RoHS and Green Product requirement with full function reliability a
7.7. Size:893K cn vbsemi
irlml0040trpbf.pdf 

IRLML0040TRPBFwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-
7.8. Size:907K cn vbsemi
irlml0060trpbf.pdf 

IRLML0060TRPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23
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History: AM9569D
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| IRF6217