All MOSFET. IRLML2402TRPBF Datasheet

 

IRLML2402TRPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLML2402TRPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028(typ) Ohm
   Package: SOT23

 IRLML2402TRPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLML2402TRPBF Datasheet (PDF)

 ..1. Size:920K  cn vbsemi
 irlml2402trpbf.pdf

IRLML2402TRPBF IRLML2402TRPBF

IRLML2402TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

 5.1. Size:243K  international rectifier
 irlml2402pbf.pdf

IRLML2402TRPBF IRLML2402TRPBF

IRLML2402PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

 5.2. Size:238K  international rectifier
 irlml2402pbf-1.pdf

IRLML2402TRPBF IRLML2402TRPBF

IRLML2402PbF-1HEXFET Power MOSFETVDS 20 VG 1RDS(on) max 0.25 (@V = 4.5V)GS3 DQg (typical) 2.6 nCID S 21.2 A(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

 5.3. Size:102K  international rectifier
 irlml2402.pdf

IRLML2402TRPBF IRLML2402TRPBF

PD - 9.1257CIRLML2402HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (

 5.4. Size:216K  international rectifier
 irlml2402gpbf.pdf

IRLML2402TRPBF IRLML2402TRPBF

PD - 96162AIRLML2402GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 20Vl SOT-23 Footprint3 Dl Low Profile (

 5.5. Size:271K  infineon
 irlml2402pbf-1.pdf

IRLML2402TRPBF IRLML2402TRPBF

IRLML2402PbF-1HEXFET Power MOSFETVDS 20 VG 1RDS(on) max 0.25 (@V = 4.5V)GS3 DQg (typical) 2.6 nCID S 21.2 A(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

 5.6. Size:219K  infineon
 irlml2402gpbf.pdf

IRLML2402TRPBF IRLML2402TRPBF

PD - 96162AIRLML2402GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 20Vl SOT-23 Footprint3 Dl Low Profile (

 5.7. Size:1466K  shenzhen
 irlml2402.pdf

IRLML2402TRPBF IRLML2402TRPBF

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l Dl l l l Gl Sl Description

 5.8. Size:2065K  kexin
 irlml2402.pdf

IRLML2402TRPBF IRLML2402TRPBF

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

 5.9. Size:2075K  kexin
 irlml2402-3.pdf

IRLML2402TRPBF IRLML2402TRPBF

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.02+0.1 RDS(ON) 250m (VGS = 4.5V)0.15 -0.020.95 -0.1+0.1D1.9-0.2 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter

 5.10. Size:2066K  kexin
 irlml2402 krlml2402.pdf

IRLML2402TRPBF IRLML2402TRPBF

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

 5.11. Size:210K  cn shikues
 irlml2402.pdf

IRLML2402TRPBF

IRLML2402N-Channel Enhancement Mode MOSFET Feature 30V/1A, RDS(ON) =750m(MAX) @VGS = 10V. Ids = 0.60A RDS(ON) = 900m(MAX) @VGS = 4.5V. Ids= 0.20A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteristics TA=25 Unless Otherwise

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WM02DN080C | KU086N10F

 

 
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