IRLML2402TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

IRLML2402PbFl Generation V TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (

IRLML2402PbF-1HEXFET Power MOSFETVDS 20 VG 1RDS(on) max 0.25 (@V = 4.5V)GS3 DQg (typical) 2.6 nCID S 21.2 A(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL

PD - 9.1257CIRLML2402HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (

PD - 96162AIRLML2402GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel N-Channel MOSFETG 1VDSS = 20Vl SOT-23 Footprint3 Dl Low Profile (

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l Dl l l l Gl Sl Description

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.02+0.1 RDS(ON) 250m (VGS = 4.5V)0.15 -0.020.95 -0.1+0.1D1.9-0.2 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter

SMD Type MOSFETN-Channel MOSFETIRLML2402 (KRlML2402)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 1.2 A( VGS = 4.5V)1 2+0.1+0.050.95 -0.1 RDS(ON) 250m (VGS = 4.5V) 0.1 -0.011.9+0.1D -0.1 RDS(ON) 350m (VGS = 2.7V)1. GateG2. Source3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symb

IRLML2402N-Channel Enhancement Mode MOSFET Feature 30V/1A, RDS(ON) =750m(MAX) @VGS = 10V. Ids = 0.60A RDS(ON) = 900m(MAX) @VGS = 4.5V. Ids= 0.20A Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. Absolute Maximum Ratings TA=25 Unless Otherwise noted Electrical Characteristics TA=25 Unless Otherwise