IRLML6302TRPBF MOSFET Datasheet: P-Ch, 20V, 4.5A. Full specification with pinout and replacement list

IRLML6302TRPBF Specs and Replacement

Type Designator: IRLML6302TRPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm

Package: SOT23

IRLML6302TRPBF substitution

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IRLML6302TRPBF datasheet

..1. Size:914K cn vbsemi
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IRLML6302TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI... See More ⇒

5.1. Size:243K international rectifier
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PD - 96159 IRLML6302GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (... See More ⇒

5.2. Size:300K international rectifier
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PD - 94947B IRLML6302PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET VDSS = -20V l SOT-23 Footprint l Low Profile (... See More ⇒

5.3. Size:100K international rectifier
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PD - 9.1259D IRLML6302 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -20V SOT-23 Footprint Low Profile (... See More ⇒