IRLMS6802TRPBF MOSFET Datasheet: P-Ch, 30V, 4A. Full specification with pinout and replacement list

IRLMS6802TRPBF Specs and Replacement

Type Designator: IRLMS6802TRPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP6

IRLMS6802TRPBF substitution

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IRLMS6802TRPBF datasheet

..1. Size:881K cn vbsemi
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IRLMS6802TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm... See More ⇒

5.1. Size:148K international rectifier
irlms6802pbf.pdf pdf_icon

PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel l Lead-Free 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi... See More ⇒

5.2. Size:91K international rectifier
irlms6802.pdf pdf_icon

PD- 91848E IRLMS6802 HEXFET Power MOSFET l Ultra Low On-Resistance A 1 6 l P-Channel MOSFET D D VDSS = -20V l Surface Mount 2 5 D D l Available in Tape & Reel 3 4 G S RDS(on) = 0.050 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit prov... See More ⇒

8.1. Size:195K international rectifier
irlms6702.pdf pdf_icon

PD - 91414C IRLMS6702 HEXFET Power MOSFET l Generation V Technology A 1 6 D D l Micro6 Package Style VDSS = -20V l Ultra Low RDS(on) 2 5 D D l P-Channel MOSFET 3 4 G S RDS(on) = 0.20 Description Fifth Generation HEXFET power MOSFETs from Top View International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. T... See More ⇒