All MOSFET. IRLR2905ZTR Datasheet

 

IRLR2905ZTR Datasheet and Replacement


   Type Designator: IRLR2905ZTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
      - MOSFET Cross-Reference Search

 

IRLR2905ZTR Datasheet (PDF)

 ..1. Size:836K  cn vbsemi
irlr2905ztr.pdf pdf_icon

IRLR2905ZTR

IRLR2905ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi

 0.1. Size:273K  international rectifier
auirlr2905ztr.pdf pdf_icon

IRLR2905ZTR

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

 5.1. Size:328K  international rectifier
irlu2905zpbf irlr2905zpbf.pdf pdf_icon

IRLR2905ZTR

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 5.2. Size:340K  international rectifier
irlr2905zpbf irlu2905zpbf.pdf pdf_icon

IRLR2905ZTR

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SSM9918GH | MDHT4N20YURH | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - IRLR2905ZTR MOSFET datasheet

 IRLR2905ZTR cross reference
 IRLR2905ZTR equivalent finder
 IRLR2905ZTR lookup
 IRLR2905ZTR substitution
 IRLR2905ZTR replacement

 

 
Back to Top

 


 
.