All MOSFET. IRLR2905ZTR Datasheet

 

IRLR2905ZTR Datasheet and Replacement


   Type Designator: IRLR2905ZTR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
 

 IRLR2905ZTR substitution

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IRLR2905ZTR Datasheet (PDF)

 ..1. Size:836K  cn vbsemi
irlr2905ztr.pdf pdf_icon

IRLR2905ZTR

IRLR2905ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limi

 0.1. Size:273K  international rectifier
auirlr2905ztr.pdf pdf_icon

IRLR2905ZTR

PD - 97583AUTOMOTIVE GRADEAUIRLR2905ZFeaturesHEXFET Power MOSFET Logic Level Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) max.13.5m Fast SwitchingGID (Silicon Limited)60A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS CompliantSID (Package Limited) 42A Automot

 5.1. Size:328K  international rectifier
irlu2905zpbf irlr2905zpbf.pdf pdf_icon

IRLR2905ZTR

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

 5.2. Size:340K  international rectifier
irlr2905zpbf irlu2905zpbf.pdf pdf_icon

IRLR2905ZTR

PD - 95774BIRLR2905ZPbFIRLU2905ZPbFFeatures HEXFET Power MOSFET Logic LevelD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 13.5m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 42ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extrem

Datasheet: IRLML6402TRPBF , IRLML9301TR , IRLMS2002TR , IRLMS6802TRPBF , IRLR014NTRP , IRLR120NTR , IRLR2705TRPBF , IRLR2905TR , IRFP460 , IRLR2908TR , IRLR3105TR , IRLR3410TR , IRLR3636TRPBF , IRLR8103VTR , IRLR8729TR , 100N03A , 30N03A .

History: 2SK1635 | HPP045N03CTA | RUH3090M3-C

Keywords - IRLR2905ZTR MOSFET datasheet

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