35N06 PDF and Equivalents Search

 ..1. Size:776K  umw-ic
 35n06.pdf

R UMW UMW 35N06 60V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 m (Typ) @ VGS =10V RDS(ON),30 m (Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson 29m ) Low Gate C... See More ⇒

 0.1. Size:627K  1
 jmtq35n06a.pdf

JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R ... See More ⇒

 0.2. Size:1335K  1
 hyg035n06ls1c2.pdf

HYG035N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/90A D D D D D D D D RDS(ON)= 2.9m (typ.) @VGS = 10V RDS(ON)= 4.7m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Motor drive for electric... See More ⇒

 0.3. Size:100K  motorola
 mtp35n06zl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP35N06ZL/D Product Preview MTP35N06ZL HDTMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET This advanced high voltage TMOS E FET is designed to 35 AMPERES withstand high energy in the avalanche mode and switch efficiently. 60 VOLTS This new high energy device also ... See More ⇒

 0.4. Size:104K  motorola
 mtb35n06zl.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB35N06ZL/D Product Preview MTB35N06ZL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 35 AMPERES 60 VOLTS This advanced high voltage TMOS E FET is designed to RDS(on) = 26 m withstand high energy in the avalanche mode and switch efficiently.... See More ⇒

 0.5. Size:444K  infineon
 ipd035n06l3.pdf

pe % # ! % (>.;?6?@ %>E Features D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D DE2?46 , D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D Type #* (... See More ⇒

 0.6. Size:406K  kec
 ku035n06p.pdf

KU035N06P SEMICONDUCTOR N-ch Trench MOS FET TECHNICAL DATA General Description A This Trench MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for DC/DC Converter, E DIM MILLIMETERS G _ Synchronous Rectification and a load switch in battery powered + A 9.9 0.2 B... See More ⇒

 0.7. Size:1033K  blue-rocket-elect
 brcs035n06sdp.pdf

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 0.8. Size:1235K  blue-rocket-elect
 brcs035n06szc.pdf

BRCS035N06SZC Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON) resistan... See More ⇒

 0.9. Size:1469K  kexin
 ndt35n06.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET NDT35N06 TO-252 Unit mm Features + 0.15 6.50- 0.15 + 0.1 2.30- 0.1 + 0.2 5.30- 0.2 VDS (V) = 60V + 0.8 0.50 - 0.7 ID = 35 A 4 RDS(ON) 23m (VGS = 10V) 2,4 RDS(ON) 33m (VGS = 4.5V) 0.127 +0.1 0.80-0.1 max RDS(ON) 37m (VGS = 4V) 1 + 0.1 1 Gate 2.3 0.60- 0.1 + 0.15 2 Drain 4... See More ⇒

 0.10. Size:1335K  hymexa
 hyg035n06ls1c2.pdf

HYG035N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/90A D D D D D D D D RDS(ON)= 2.9m (typ.) @VGS = 10V RDS(ON)= 4.7m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Motor drive for electric... See More ⇒

 0.11. Size:1755K  matsuki electric
 me35n06 me35n06-g.pdf

ME35N06/ME35N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 32m @VGS=10V The ME35N06-G is the N-Channel logic enhancement mode power RDS(ON) 40m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

 0.12. Size:793K  semihow
 hrp35n06k.pdf

December 2014 BVDSS = 60 V RDS(on) typ = 2.8m HRP35N06K ID = 210 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 190 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 2.8 m (Typ.... See More ⇒

 0.13. Size:466K  way-on
 wmo35n06t1.pdf

WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET Description WMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain D superior switching performance. S G Features TO-252 V = 60V, I = 35A DS D R ... See More ⇒

 0.14. Size:1288K  jiejie micro
 jmtq35n06a.pdf

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 0.15. Size:381K  jiejie micro
 jmte035n06d.pdf

JMTE035N06D Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 180A Load Switch R ... See More ⇒

 0.16. Size:342K  jiejie micro
 jmtc035n06d.pdf

JMTC035N06D Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 180A Load Switch R ... See More ⇒