35N06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 35N06
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 36.2 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 8.5 ns
Выходная емкость (Cd): 73.5 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.029 Ohm
Тип корпуса: TO252
35N06 Datasheet (PDF)
35n06.pdf
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RUMWUMW 35N0660V N-Channel Power MosfetGeneral DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent Rdsonand low gate charge. Which accords with the RoHS standard.FeaturesVDS = 60V,ID =35ARDS(ON),23 m(Typ) @ VGS =10VRDS(ON),30 m(Typ) @ VGS =4.5VFast SwitchingLow ON Resistance(Rdson29m)Low Gate C
jmtq35n06a.pdf
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JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R
hyg035n06ls1c2.pdf
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HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric
mtp35n06zl.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP35N06ZL/DProduct PreviewMTP35N06ZLHDTMOS E-FET.Power Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to35 AMPERESwithstand high energy in the avalanche mode and switch efficiently.60 VOLTSThis new high energy device also
mtb35n06zl.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB35N06ZL/DProduct PreviewMTB35N06ZLHDTMOS E-FET.High Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 35 AMPERES60 VOLTSThis advanced high voltage TMOS EFET is designed toRDS(on) = 26 mwithstand high energy in the avalanche mode and switch efficiently.
ipd035n06l3.pdf
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ku035n06p.pdf
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KU035N06PSEMICONDUCTORN-ch Trench MOS FETTECHNICAL DATAGeneral Description AThis Trench MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for DC/DC Converter,E DIM MILLIMETERSG_Synchronous Rectification and a load switch in battery powered +A 9.9 0.2B
ndt35n06.pdf
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SMD Type MOSFETN-Channel Enhancement MOSFETNDT35N06TO-252Unit: mm Features+ 0.156.50- 0.15+ 0.12.30- 0.1+ 0.25.30- 0.2 VDS (V) = 60V + 0.80.50 - 0.7 ID = 35 A4 RDS(ON) 23m (VGS = 10V)2,4 RDS(ON) 33m (VGS = 4.5V)0.127+0.10.80-0.1max RDS(ON) 37m (VGS = 4V)1+ 0.1 1 : Gate2.3 0.60- 0.1+ 0.152 : Drain4
hyg035n06ls1c2.pdf
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HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric
me35n06 me35n06-g.pdf
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ME35N06/ME35N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)32m@VGS=10V The ME35N06-G is the N-Channel logic enhancement mode power RDS(ON)40m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to
hrp35n06k.pdf
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December 2014 BVDSS = 60 V RDS(on) typ = 2.8m HRP35N06K ID = 210 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 190 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.8 m (Typ.
wmo35n06t1.pdf
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WMO35N06T1 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMO35N06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain Dsuperior switching performance. SGFeatures TO-252 V = 60V, I = 35A DS D R
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