All MOSFET. FDA24N50F Datasheet

 

FDA24N50F MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDA24N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3PN

 FDA24N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDA24N50F Datasheet (PDF)

 ..1. Size:670K  fairchild semi
 fda24n50f.pdf

FDA24N50F FDA24N50F

November 2008UniFETTMFDA24N50FtmN-Channel MOSFET 500V, 24A, 0.2Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low Gate Charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 32pF)This advance technology has been esp

 ..2. Size:1524K  onsemi
 fda24n50f.pdf

FDA24N50F FDA24N50F

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:209K  inchange semiconductor
 fda24n50f.pdf

FDA24N50F FDA24N50F

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDA24N50FFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

 6.1. Size:688K  fairchild semi
 fda24n50.pdf

FDA24N50F FDA24N50F

August 2008UniFETTMFDA24N50N-Channel MOSFET 500V, 24A, 0.19Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 65nC)DMOS technology. Low Crss ( Typ. 35pF)This advance technology has been especially t

 8.1. Size:687K  fairchild semi
 fda24n40f.pdf

FDA24N50F FDA24N50F

December 2007UniFETTMFDA24N40FtmN-Channel MOSFET, FRFET 400V, 23A, 0.19Features Descripition RDS(on) = 0.15 ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (Typ. 46nC)DMOS technology.This advanced technology has been especially tailored

 8.2. Size:258K  inchange semiconductor
 fda24n40f.pdf

FDA24N50F FDA24N50F

isc N-Channel MOSFET Transistor FDA24N40FFEATURESDrain Current I = 23A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 190m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in high efficient switched modepower supplie

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top