FDA24N50F - описание и поиск аналогов

November 2008 UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2 Features Description RDS(on) = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 32pF) This advance technology has been esp

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDA24N50F FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

August 2008 UniFETTM FDA24N50 N-Channel MOSFET 500V, 24A, 0.19 Features Description RDS(on) = 0.16 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 65nC) DMOS technology. Low Crss ( Typ. 35pF) This advance technology has been especially t

December 2007 UniFETTM FDA24N40F tm N-Channel MOSFET, FRFET 400V, 23A, 0.19 Features Descripition RDS(on) = 0.15 ( Typ.)@ VGS = 10V, ID = 11.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (Typ. 46nC) DMOS technology. This advanced technology has been especially tailored

isc N-Channel MOSFET Transistor FDA24N40F FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 190m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in high efficient switched mode power supplie