All MOSFET. SI2301B Datasheet

 

SI2301B MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI2301B
   Marking Code: A1SHB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT23

 SI2301B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2301B Datasheet (PDF)

 ..1. Size:827K  umw-ic
 si2301b.pdf

SI2301B SI2301B

RUMW UMW SI2301BUMW SI2301BUMW SI2301B P-Channel 20-V(D-S) MOSFET UMW SI2301BID V(BR)DSS RDS(on)MAX SOT-23 120 m@-4.5V-20V2.5Am@-2.5V150 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE z Load Switch for Portable Devices TrenchFET Power MOSFET z DC/DC Converter MARKING Equivalent Circuit A1SHBMaximum ratings (Ta=25 unless otherwise note

 0.1. Size:184K  vishay
 si2301bds.pdf

SI2301B SI2301B

Si2301BDSVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)bPb-free0.100 at VGS = - 4.5 V Available- 2.4- 200.150 at VGS = - 2.5 V RoHS*- 2.0COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2301 BDS (L1)** Marking CodeOrdering Information: Si2301BDS-T1Si2301BDS-T1-E3 (Lead (Pb)

 0.2. Size:1943K  kexin
 si2301bds-3.pdf

SI2301B SI2301B

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301BDS (KI2301BDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5

 0.3. Size:1887K  kexin
 si2301bds.pdf

SI2301B SI2301B

SMD Type MOSFETP-Channel Enhancement MOSFET SI2301BDS (KI2301BDS)SOT-23Unit: mm Features+0.12.9 -0.10.4+0.1-0.1 VDS (V) =-20V3 RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Stea

 0.4. Size:866K  cn vbsemi
 si2301bds-t1-ge3.pdf

SI2301B SI2301B

SI2301BDS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMP08N70EM | HM1404

 

 
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