TPCJ2101 Specs and Replacement
Type Designator: TPCJ2101
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT323
TPCJ2101 substitution
- MOSFET ⓘ Cross-Reference Search
TPCJ2101 datasheet
Detailed specifications: PDMN66D0LDW, PNTK3139PT5G, PRHP020N06, PRZM002P02T2L, PUM6K31N, TPAO5401EL, TPAO5404EL, TPCJ1012, 20N50, TPCJ2102, TPDMN26D0UFB4, TPDMP2160UW, TPM1012ER3, TPM1012R3, TPM1013ER3, TPM2008EP3, TPM2008EP3-A
Keywords - TPCJ2101 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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