All MOSFET. TPCJ2101 Datasheet

 

TPCJ2101 Datasheet and Replacement


   Type Designator: TPCJ2101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323
 

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TPCJ2101 Datasheet (PDF)

 ..1. Size:1540K  cn tech public
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TPCJ2101

 7.1. Size:1323K  cn tech public
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TPCJ2101

Datasheet: PDMN66D0LDW , PNTK3139PT5G , PRHP020N06 , PRZM002P02T2L , PUM6K31N , TPAO5401EL , TPAO5404EL , TPCJ1012 , 2N60 , TPCJ2102 , TPDMN26D0UFB4 , TPDMP2160UW , TPM1012ER3 , TPM1012R3 , TPM1013ER3 , TPM2008EP3 , TPM2008EP3-A .

History: CEM4946 | 20N65 | IXFH14N100Q2 | TSA24N50M | PMV22EN | RFG40N10LE | QM0006G

Keywords - TPCJ2101 MOSFET datasheet

 TPCJ2101 cross reference
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