TPDMN26D0UFB4 Specs and Replacement
Type Designator: TPDMN26D0UFB4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 20 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: DFN1006-3
TPDMN26D0UFB4 substitution
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TPDMN26D0UFB4 datasheet
Detailed specifications: PRHP020N06, PRZM002P02T2L, PUM6K31N, TPAO5401EL, TPAO5404EL, TPCJ1012, TPCJ2101, TPCJ2102, IRF2807, TPDMP2160UW, TPM1012ER3, TPM1012R3, TPM1013ER3, TPM2008EP3, TPM2008EP3-A, TPM2008P3, TPM2009EP3
Keywords - TPDMN26D0UFB4 MOSFET specs
TPDMN26D0UFB4 cross reference
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TPDMN26D0UFB4 substitution
TPDMN26D0UFB4 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 2SK3618 | 2SK3573-S | RFL1N18L | SI2372DS | IRLR8726PBF | IRLTS2242PBF | 4N60KG-TM3-T
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