All MOSFET. TPM1012ER3 Datasheet

 

TPM1012ER3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPM1012ER3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 20(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT523

 TPM1012ER3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPM1012ER3 Datasheet (PDF)

 ..1. Size:361K  cn tech public
 tpm1012er3.pdf

TPM1012ER3 TPM1012ER3

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 7.1. Size:4810K  cn tech public
 tpm1012r3.pdf

TPM1012ER3 TPM1012ER3

TPM1 01 2R3N-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V Battery protection High-side Switching Low On-Resistance: 0.7 Load switch Low Threshold: 0.8V (Typ.) Power management Fast Switching Speed: 10ns S-Prefix for Automotive and Other Applications

 8.1. Size:491K  cn tech public
 tpm1013er3.pdf

TPM1012ER3 TPM1012ER3

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Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NP36N055HHE | SHD225503 | 2MI50S-050 | WNM4002

 

 
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