TPM1012ER3 PDF and Equivalents Search

 

TPM1012ER3 Specs and Replacement

Type Designator: TPM1012ER3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 20 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT523

TPM1012ER3 substitution

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TPM1012ER3 datasheet

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TPM1012ER3

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TPM1012ER3

TPM1 01 2R3 N-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications TrenchFET Power MOSFET 1.8-V Rated Gate-Source ESD Protected 2000V Battery protection High-side Switching Low On-Resistance 0.7 Load switch Low Threshold 0.8V (Typ.) Power management Fast Switching Speed 10ns S-Prefix for Automotive and Other Applications... See More ⇒

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TPM1012ER3

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Detailed specifications: PUM6K31N, TPAO5401EL, TPAO5404EL, TPCJ1012, TPCJ2101, TPCJ2102, TPDMN26D0UFB4, TPDMP2160UW, IRFZ24N, TPM1012R3, TPM1013ER3, TPM2008EP3, TPM2008EP3-A, TPM2008P3, TPM2009EP3, TPM2019-3, TPM2030-3

Keywords - TPM1012ER3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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