All MOSFET. TPM1012R3 Datasheet

 

TPM1012R3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPM1012R3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 0.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.75 nC
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: SOT523

 TPM1012R3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPM1012R3 Datasheet (PDF)

 ..1. Size:4810K  cn tech public
 tpm1012r3.pdf

TPM1012R3 TPM1012R3

TPM1 01 2R3N-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V Battery protection High-side Switching Low On-Resistance: 0.7 Load switch Low Threshold: 0.8V (Typ.) Power management Fast Switching Speed: 10ns S-Prefix for Automotive and Other Applications

 7.1. Size:361K  cn tech public
 tpm1012er3.pdf

TPM1012R3 TPM1012R3

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 8.1. Size:491K  cn tech public
 tpm1013er3.pdf

TPM1012R3 TPM1012R3

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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