TPM1013ER3 Specs and Replacement
Type Designator: TPM1013ER3
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 6 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm
Package: SOT523
TPM1013ER3 substitution
- MOSFET ⓘ Cross-Reference Search
TPM1013ER3 datasheet
tpm1013er3.pdf
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tpm1012er3.pdf
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tpm1012r3.pdf
TPM1 01 2R3 N-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications TrenchFET Power MOSFET 1.8-V Rated Gate-Source ESD Protected 2000V Battery protection High-side Switching Low On-Resistance 0.7 Load switch Low Threshold 0.8V (Typ.) Power management Fast Switching Speed 10ns S-Prefix for Automotive and Other Applications... See More ⇒
Detailed specifications: TPAO5404EL, TPCJ1012, TPCJ2101, TPCJ2102, TPDMN26D0UFB4, TPDMP2160UW, TPM1012ER3, TPM1012R3, 8N60, TPM2008EP3, TPM2008EP3-A, TPM2008P3, TPM2009EP3, TPM2019-3, TPM2030-3, TPM2077, TPM2101BC3
Keywords - TPM1013ER3 MOSFET specs
TPM1013ER3 cross reference
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TPM1013ER3 substitution
TPM1013ER3 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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