All MOSFET. TPM1013ER3 Datasheet

 

TPM1013ER3 Datasheet and Replacement


   Type Designator: TPM1013ER3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 6(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm
   Package: SOT523
 

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TPM1013ER3 Datasheet (PDF)

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TPM1013ER3

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TPM1013ER3

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TPM1013ER3

TPM1 01 2R3N-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V Battery protection High-side Switching Low On-Resistance: 0.7 Load switch Low Threshold: 0.8V (Typ.) Power management Fast Switching Speed: 10ns S-Prefix for Automotive and Other Applications

Datasheet: TPAO5404EL , TPCJ1012 , TPCJ2101 , TPCJ2102 , TPDMN26D0UFB4 , TPDMP2160UW , TPM1012ER3 , TPM1012R3 , K2611 , TPM2008EP3 , TPM2008EP3-A , TPM2008P3 , TPM2009EP3 , TPM2019-3 , TPM2030-3 , TPM2077 , TPM2101BC3 .

History: IXFH12N90P | SGSP239

Keywords - TPM1013ER3 MOSFET datasheet

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