TPM1013ER3 Datasheet and Replacement
Type Designator: TPM1013ER3
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 6(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.59 Ohm
Package: SOT523
TPM1013ER3 substitution
TPM1013ER3 Datasheet (PDF)
tpm1013er3.pdf
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tpm1012er3.pdf
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tpm1012r3.pdf
TPM1 01 2R3N-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications TrenchFET Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V Battery protection High-side Switching Low On-Resistance: 0.7 Load switch Low Threshold: 0.8V (Typ.) Power management Fast Switching Speed: 10ns S-Prefix for Automotive and Other Applications
Datasheet: TPAO5404EL , TPCJ1012 , TPCJ2101 , TPCJ2102 , TPDMN26D0UFB4 , TPDMP2160UW , TPM1012ER3 , TPM1012R3 , K2611 , TPM2008EP3 , TPM2008EP3-A , TPM2008P3 , TPM2009EP3 , TPM2019-3 , TPM2030-3 , TPM2077 , TPM2101BC3 .
History: S80N08R | BUK9C07-65BIT | HGB027N10S | SWP7N70K | TPCC8002-H | H7N1004FM | AP2765I-A-HF
Keywords - TPM1013ER3 MOSFET datasheet
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History: S80N08R | BUK9C07-65BIT | HGB027N10S | SWP7N70K | TPCC8002-H | H7N1004FM | AP2765I-A-HF
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