TPM2008EP3 MOSFET Datasheet: N-Ch, 20V, 0.7A. Full specification with pinout and replacement list

TPM2008EP3 Specs and Replacement

Type Designator: TPM2008EP3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 20 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: DFN1006-3

TPM2008EP3 substitution

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TPM2008EP3 datasheet

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TPM2008 EP3-A N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TW Application Features Load/Power Switching Surface Mount Package www.sot23.com.tw Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive www.sot23.com.tw Electronics ESD Protected www.sot23.com.tw Logic Level Shift... See More ⇒

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TPM2008 P3 N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TW Application Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ... See More ⇒

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