All MOSFET. TPM2008EP3 Datasheet

 

TPM2008EP3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPM2008EP3
   Marking Code: N5.*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 20(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: DFN1006-3L

 TPM2008EP3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPM2008EP3 Datasheet (PDF)

 ..1. Size:1699K  cn tech public
 tpm2008ep3.pdf

TPM2008EP3 TPM2008EP3

 0.1. Size:1003K  cn tech public
 tpm2008ep3-a.pdf

TPM2008EP3 TPM2008EP3

TPM2008 EP3-AN-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Packagewww.sot23.com.tw Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive www.sot23.com.twElectronics ESD Protectedwww.sot23.com.tw Logic Level Shift

 7.1. Size:798K  cn tech public
 tpm2008p3.pdf

TPM2008EP3 TPM2008EP3

TPM2008 P3N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ

 8.1. Size:806K  cn tech public
 tpm2009ep3.pdf

TPM2008EP3 TPM2008EP3

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