TPM2008EP3 MOSFET. Datasheet pdf. Equivalent
Type Designator: TPM2008EP3
Marking Code: N5.*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 0.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 20(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: DFN1006-3L
TPM2008EP3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPM2008EP3 Datasheet (PDF)
tpm2008ep3-a.pdf
TPM2008 EP3-AN-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Packagewww.sot23.com.tw Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive www.sot23.com.twElectronics ESD Protectedwww.sot23.com.tw Logic Level Shift
tpm2008p3.pdf
TPM2008 P3N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ
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