TPM2077 Datasheet and Replacement
Type Designator: TPM2077
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.95 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 13 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SOT723
- MOSFET Cross-Reference Search
TPM2077 Datasheet (PDF)
tpm2077.pdf

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tpm2008p3.pdf

TPM2008 P3N-Channel Enhancement Mode MOSFET WWW.SOT23.COM.TWApplication Features Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Management for Ultra Small Portable Operated at Low Logic Level Gate Drive Electronics ESD Protected Logic Level Shift Package and Pin Configuration Circuit diagram Circ
tpm2030-3.pdf

TPM2030-3N-Channel Mosfetwww.sot23.com.twProduct SummaryApplication RDS(on)=Typ 200m@VGS= 4.5V Load/Power switch RDS(on)=Typ 250m@VGS= 2.5V Interfacing, logic switching Lead free product is acquired Battery management for ultra protable electronics Surface mount package N-channel switch with low RDS(on) Operated at low logic le
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History: IXTP110N055P | FQB6N70TM | PH4830L | EMH2417R | STD12N06LT4 | CHM62A2PAGP | HUF75307D3
Keywords - TPM2077 MOSFET datasheet
TPM2077 cross reference
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History: IXTP110N055P | FQB6N70TM | PH4830L | EMH2417R | STD12N06LT4 | CHM62A2PAGP | HUF75307D3



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