All MOSFET. TPM2102BC3 Datasheet

 

TPM2102BC3 Datasheet and Replacement


   Type Designator: TPM2102BC3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.9 nC
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT323
 

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TPM2102BC3 Datasheet (PDF)

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TPM2102BC3

TPM21 02B C3N-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications V 20V DSBattery protection I 2.5A DLoad switch R ( at V =4.5V) 70 mohm DS(ON) GSPower management R ( at V =2.5V) 98 mohm DS(ON) GSDDSG GSOT323SAbsolute Maximum Ratings (TA=25C unless otherwise specified) Parameter Symbol Limit UnitDr

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TPM2102BC3

TPM21 01 B C3P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications V -20V DSBattery protection I -2.0A DLoad switch R ( at V =-4.5V) 130 mohm DS(ON) GSPower management R ( at V =-2.5V) 170 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSDSGSOT323Absolute Maximum Ratings (TA=25C unless otherwise

Datasheet: TPM2008EP3 , TPM2008EP3-A , TPM2008P3 , TPM2009EP3 , TPM2019-3 , TPM2030-3 , TPM2077 , TPM2101BC3 , IRFZ46N , TPM2601C3 , TPM3008EP3 , TPM3134NX3 , TPM3139K , TPM4105EC6 , TPM4153-3 , TPM5121NEC6 , TPM603NT3 .

Keywords - TPM2102BC3 MOSFET datasheet

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