All MOSFET. TPM2601C3 Datasheet

 

TPM2601C3 Datasheet and Replacement


   Type Designator: TPM2601C3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323
 

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TPM2601C3 Datasheet (PDF)

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TPM2601C3

TPM26 01 C3P-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPM2601C3 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C unle

Datasheet: TPM2008EP3-A , TPM2008P3 , TPM2009EP3 , TPM2019-3 , TPM2030-3 , TPM2077 , TPM2101BC3 , TPM2102BC3 , IRF1405 , TPM3008EP3 , TPM3134NX3 , TPM3139K , TPM4105EC6 , TPM4153-3 , TPM5121NEC6 , TPM603NT3 , TPM62D0LFB .

History: OSG65R140KSZF | OSG65R290AF | ME50N10 | RSF014N03 | 7N65L-TQ2-T | LSE55R140GF | H7N0608AB

Keywords - TPM2601C3 MOSFET datasheet

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