TPM2601C3 PDF and Equivalents Search

 

TPM2601C3 Specs and Replacement

Type Designator: TPM2601C3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT323

TPM2601C3 substitution

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TPM2601C3 datasheet

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TPM2601C3

TPM26 01 C3 P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPM2601C3 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=25 C unle... See More ⇒

Detailed specifications: TPM2008EP3-A, TPM2008P3, TPM2009EP3, TPM2019-3, TPM2030-3, TPM2077, TPM2101BC3, TPM2102BC3, IRF830, TPM3008EP3, TPM3134NX3, TPM3139K, TPM4105EC6, TPM4153-3, TPM5121NEC6, TPM603NT3, TPM62D0LFB

Keywords - TPM2601C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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