TPM3008EP3 Specs and Replacement
Type Designator: TPM3008EP3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 18.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: DFN1006-3
TPM3008EP3 substitution
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TPM3008EP3 datasheet
Detailed specifications: TPM2008P3, TPM2009EP3, TPM2019-3, TPM2030-3, TPM2077, TPM2101BC3, TPM2102BC3, TPM2601C3, IRLB3034, TPM3134NX3, TPM3139K, TPM4105EC6, TPM4153-3, TPM5121NEC6, TPM603NT3, TPM62D0LFB, TPM6401S3
Keywords - TPM3008EP3 MOSFET specs
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History: VSF013N10MS
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