TPM3008EP3 MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPM3008EP3
   Marking Code: 35
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.6 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 18.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: DFN1006-3L

TPM3008EP3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search