TPM5121NEC6 MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPM5121NEC6
   Marking Code: TF*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.7 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: SOT363

TPM5121NEC6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search