TPM5121NEC6 Specs and Replacement
Type Designator: TPM5121NEC6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT363
TPM5121NEC6 substitution
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TPM5121NEC6 datasheet
Detailed specifications: TPM2101BC3, TPM2102BC3, TPM2601C3, TPM3008EP3, TPM3134NX3, TPM3139K, TPM4105EC6, TPM4153-3, EMB04N03H, TPM603NT3, TPM62D0LFB, TPM6401S3, TPM7002BKM, TPM7002DFN3, TPM7002ER3, TPM8205ATS6, TPM8205TS6
Keywords - TPM5121NEC6 MOSFET specs
TPM5121NEC6 cross reference
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TPM5121NEC6 substitution
TPM5121NEC6 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP2762R-A | OSG65R290FEF | SLF16N65S | SI2323DDS-T1-GE3 | TK49N65W
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