TPNTJD4105CT1G Datasheet. Specs and Replacement

Type Designator: TPNTJD4105CT1G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 20 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: SOT363

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TPNTJD4105CT1G datasheet

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TPNTJD4105CT1G

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Detailed specifications: TPM7002BKM, TPM7002DFN3, TPM7002ER3, TPM8205ATS6, TPM8205TS6, TPM9665D6, TPNTA4151PT1G, TPNTA4153NT1G, IRF740, TPNTK3134NT1G, TPNTK3139PT1G, TPNTS4101PT1G, UT8205AG-AG6, ZXMN6A11ZTA-P, CS10N70FA9R, ME2310, ME9926

Keywords - TPNTJD4105CT1G MOSFET specs

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