TPNTJD4105CT1G MOSFET. Datasheet pdf. Equivalent

   Type Designator: TPNTJD4105CT1G
   Marking Code: TC*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 20(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SOT363

TPNTJD4105CT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search