KD2310 Datasheet and Replacement
Type Designator: KD2310
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.09 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
KD2310 substitution
KD2310 Datasheet (PDF)
kd2310.pdf

KD2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1
Datasheet: ME9926 , J330 , K3150 , K4018 , MMBF170LT1G , MMDF3N04HD , MCH3409-TL , KD2306A , 7N65 , KD3400SRG , IRLU110P , IRLU3103P , IRLU3410P , ISL9N306AD3S , ISL9N308AD3ST , ISL9N308AD3 , K1307 .
History: SFP055N100C2
Keywords - KD2310 MOSFET datasheet
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History: SFP055N100C2



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