ISL9N306AD3S Specs and Replacement
Type Designator: ISL9N306AD3S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 525 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 typ Ohm
Package: TO252
ISL9N306AD3S substitution
- MOSFET ⓘ Cross-Reference Search
ISL9N306AD3S datasheet
isl9n306ad3s.pdf
ISL9N306AD3S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET AB... See More ⇒
isl9n306as3s.pdf
ISL9N306AS3S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0038 at VGS = 10 V 98 30 82 nC 0.0044 at VGS = 4.5 V 98 APPLICATIONS OR-ing Server DC/DC D I2PAK D2PAK (TO-262) (TO-263) G G D S S V... See More ⇒
isl9n302as3st.pdf
April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10V low on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5V Optimized for switching applications, this... See More ⇒
isl9n303ap3.pdf
September 2002 PWM Optimized ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m General Description Features This device employs a new advanced trench MOSFET Fast switching technology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10V low on-resistance. rDS(ON) = 0.004 (Typ), VGS =... See More ⇒
Detailed specifications: MMDF3N04HD, MCH3409-TL, KD2306A, KD2310, KD3400SRG, IRLU110P, IRLU3103P, IRLU3410P, 8205A, ISL9N308AD3ST, ISL9N308AD3, K1307, K2543, K2543-FP, K3569, K3569-FP, K4145
Keywords - ISL9N306AD3S MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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