ISL9N306AD3S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ISL9N306AD3S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 205 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 61 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 525 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.005(typ) Ohm
Тип корпуса: TO252
Аналог (замена) для ISL9N306AD3S
ISL9N306AD3S Datasheet (PDF)
isl9n306ad3s.pdf
ISL9N306AD3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETAB
isl9n306as3s.pdf
ISL9N306AS3Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0038 at VGS = 10 V 9830 82 nC0.0044 at VGS = 4.5 V 98APPLICATIONS OR-ing Server DC/DCDI2PAK D2PAK(TO-262) (TO-263)GGDSSV
isl9n302as3st.pdf
April 2002ISL9N302AS3STN-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) =0.0019 (Typ), VGS =10Vlow on-resistance. rDS(ON) =0.0027 (Typ), VGS =4.5VOptimized for switching applications, this
isl9n303ap3.pdf
September 2002PWM OptimizedISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3N-Channel Logic Level UltraFET Trench MOSFETs30V, 75A, 3.2mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0026 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.004 (Typ), VGS =
isl9n302ap3.pdf
January 2002ISL9N302AP3N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETsGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.0019 (Typ), VGS = 10Vlow on-resistance. rDS(ON) = 0.0027 (Typ), VGS = 4.5VOptimized for switching applications,
isl9n308ad3.pdf
ISL9N308AD3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABS
isl9n308ad3st.pdf
ISL9N308AD3STwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETA
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