K2543-FP Specs and Replacement
Type Designator: K2543-FP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 typ Ohm
Package: TO220FP
K2543-FP substitution
- MOSFET ⓘ Cross-Reference Search
K2543-FP datasheet
2sk2543.pdf
2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2543 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Ma... See More ⇒
k2543.pdf
K2543 www.VBsemi.tw N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) 22 Qgd (nC) Configuration ... See More ⇒
2sk2543.pdf
isc N-Channel MOSFET Transistor 2SK2543 FEATURES Static drain-source on-resistance RDS(on) 0.85 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: IRLU110P, IRLU3103P, IRLU3410P, ISL9N306AD3S, ISL9N308AD3ST, ISL9N308AD3, K1307, K2543, AON7408, K3569, K3569-FP, K4145, KD2301, KD3422A, KD4953, LR024N, LR8103V
Keywords - K2543-FP MOSFET specs
K2543-FP cross reference
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K2543-FP replacement
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History: WSR18P10
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