All MOSFET. K3569 Datasheet


K3569 MOSFET. Datasheet pdf. Equivalent

   Type Designator: K3569
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 106 W
   Maximum Drain-Source Voltage |Vds|: 650 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Rise Time (tr): 11 nS
   Drain-Source Capacitance (Cd): 300 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.65(typ) Ohm
   Package: TO220AB TO263

 K3569 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


K3569 Datasheet (PDF)

 ..1. Size:1972K  cn vbsemi

K3569 K3569

K3569www.VBsemi.twN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)22Qgd (nC)Configuration

 0.1. Size:233K  toshiba

K3569 K3569

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abso

 0.2. Size:214K  inchange semiconductor

K3569 K3569

isc N-Channel MOSFET Transistor 2SK3569DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


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