MMDF3P03HDR Datasheet and Replacement

MMDF3P03HDRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3P03HD/DDesigner's Data SheetMMDF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 100 mWproce

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3P03HD/DDesigner's Data SheetMMDF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 100 mWproce

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N02HD/DDesigner's Data SheetMMDF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3C03HD/DDesigner's Data SheetMMDF3C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs30 VOLTSwhich utilize Motorolas High Cell Density HDTMOS process.NCH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3207/DProduct PreviewMMDF3207Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.8 AMPERESlatest MOSFET technology process to achieve the lowes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3C03HD/DDesigner's Data SheetMMDF3C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs30 VOLTSwhich utilize Motorolas High Cell Density HDTMOS process.NCH

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3207/DProduct PreviewMMDF3207Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.8 AMPERESlatest MOSFET technology process to achieve the lowes

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3200Z/DProduct PreviewMMDF3200ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas11.5 AMPERESlatest MOSFET technology process to achieve the lo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3304/DProduct PreviewMMDF3304Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.3 AMPERESlatest MOSFET technology process to achieve the lowes

MMDF3N02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices ar

MMDF3N02HDPower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in

MMDF3N04HDPreferred DevicePower MOSFET3 Amps, 40 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding highenergy in the avalanche and commutation modes and the drain-to-sourcehttp://onsemi.comdiode has a very low reverse recovery time. MiniMOSt devices aredesigned for use in

MMDF3N04HDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann