Справочник MOSFET. MMDF3P03HDR

 

MMDF3P03HDR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMDF3P03HDR
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 32 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 215 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035(typ) Ohm
   Тип корпуса: SO8

 Аналог (замена) для MMDF3P03HDR

 

 

MMDF3P03HDR Datasheet (PDF)

 ..1. Size:919K  cn vbsemi
mmdf3p03hdr.pdf

MMDF3P03HDR MMDF3P03HDR

MMDF3P03HDRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

 0.1. Size:203K  motorola
mmdf3p03hdrev1.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3P03HD/DDesigner's Data SheetMMDF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 100 mWproce

 4.1. Size:208K  motorola
mmdf3p03hd.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3P03HD/DDesigner's Data SheetMMDF3P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETDual HDTMOS devices are an advanced series of power30 VOLTSMOSFETs which utilize Motorolas High Cell Density TMOSRDS(on) = 100 mWproce

 9.1. Size:240K  motorola
mmdf3n03hd.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

 9.2. Size:254K  motorola
mmdf3n02hd.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N02HD/DDesigner's Data SheetMMDF3N02HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETMiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERESwhich utilize Motorolas High Cell Density HDTMOS process. 20 VOLTS

 9.3. Size:213K  motorola
mmdf3n06hdrev0.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

 9.4. Size:272K  motorola
mmdf3c03hdrev1.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3C03HD/DDesigner's Data SheetMMDF3C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs30 VOLTSwhich utilize Motorolas High Cell Density HDTMOS process.NCH

 9.5. Size:84K  motorola
mmdf3207rev0.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3207/DProduct PreviewMMDF3207Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.8 AMPERESlatest MOSFET technology process to achieve the lowes

 9.6. Size:277K  motorola
mmdf3c03hd.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3C03HD/DDesigner's Data SheetMMDF3C03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceComplementary TMOSField Effect TransistorsCOMPLEMENTARYDUAL TMOS POWER FETMiniMOS devices are an advanced series of power MOSFETs30 VOLTSwhich utilize Motorolas High Cell Density HDTMOS process.NCH

 9.7. Size:248K  motorola
mmdf3n04hd.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N04HD/DDesigner's Data SheetMMDF3N04HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. These 3.4 AMPERESmini

 9.8. Size:281K  motorola
mmdf3n03hdrev6.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N03HD/DDesigner's Data SheetMMDF3N03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSMiniMOS devices are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density HDTMOS process. 4.1 AMPERESThese min

 9.9. Size:88K  motorola
mmdf3207.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3207/DProduct PreviewMMDF3207Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual P-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.8 AMPERESlatest MOSFET technology process to achieve the lowes

 9.10. Size:86K  motorola
mmdf3200z.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3200Z/DProduct PreviewMMDF3200ZMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas11.5 AMPERESlatest MOSFET technology process to achieve the lo

 9.11. Size:218K  motorola
mmdf3n06hd.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3N06HD/DAdvance InformationMMDF3N06HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSDual HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process. These60 VOLTSminiature surface mou

 9.12. Size:86K  motorola
mmdf3304.pdf

MMDF3P03HDR MMDF3P03HDR

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMDF3304/DProduct PreviewMMDF3304Medium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Dual N-ChannelField Effect TransistorsDUAL TMOSPOWER MOSFETWaveFET devices are an advanced series of power MOSFETs which utilize Motorolas7.3 AMPERESlatest MOSFET technology process to achieve the lowes

 9.13. Size:97K  onsemi
mmdf3n02hd.pdf

MMDF3P03HDR MMDF3P03HDR

MMDF3N02HDPreferred DevicePower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.3 AMPERES, 20 VOLTSMiniMOSt devices ar

 9.14. Size:129K  onsemi
mmdf3n02hdr2 mmdf3n02hdr2g.pdf

MMDF3P03HDR MMDF3P03HDR

MMDF3N02HDPower MOSFET3 Amps, 20 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstandinghttp://onsemi.comhigh energy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time. These3 AMPERES, 20 VOLTSdevices are designed for use in

 9.15. Size:99K  onsemi
mmdf3n04hd.pdf

MMDF3P03HDR MMDF3P03HDR

MMDF3N04HDPreferred DevicePower MOSFET3 Amps, 40 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding highenergy in the avalanche and commutation modes and the drain-to-sourcehttp://onsemi.comdiode has a very low reverse recovery time. MiniMOSt devices aredesigned for use in

 9.16. Size:949K  cn vbsemi
mmdf3n04hd.pdf

MMDF3P03HDR MMDF3P03HDR

MMDF3N04HDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: PTF4N60

 

 
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