MMDF3P03HDR - описание и поиск аналогов

MMDF3P03HDR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3P03HD/D Designer's Data Sheet MMDF3P03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 30 VOLTS MOSFETs which utilize Motorola s High Cell Density TMOS RDS(on) = 100 mW proce

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3P03HD/D Designer's Data Sheet MMDF3P03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET Dual HDTMOS devices are an advanced series of power 30 VOLTS MOSFETs which utilize Motorola s High Cell Density TMOS RDS(on) = 100 mW proce

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N03HD/D Designer's Data Sheet MMDF3N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process. 4.1 AMPERES These min

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N02HD/D Designer's Data Sheet MMDF3N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET MiniMOS devices are an advanced series of power MOSFETs 3.0 AMPERES which utilize Motorola s High Cell Density HDTMOS process. 20 VOLTS

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N06HD/D Advance Information MMDF3N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS Dual HDTMOS are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density TMOS process. These 60 VOLTS miniature surface mou

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3C03HD/D Designer's Data Sheet MMDF3C03HD Medium Power Surface Mount Products Motorola Preferred Device Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET MiniMOS devices are an advanced series of power MOSFETs 30 VOLTS which utilize Motorola s High Cell Density HDTMOS process. N CH

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3207/D Product Preview MMDF3207 Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET WaveFET devices are an advanced series of power MOSFETs which utilize Motorola s 7.8 AMPERES latest MOSFET technology process to achieve the lowes

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3C03HD/D Designer's Data Sheet MMDF3C03HD Medium Power Surface Mount Products Motorola Preferred Device Complementary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET MiniMOS devices are an advanced series of power MOSFETs 30 VOLTS which utilize Motorola s High Cell Density HDTMOS process. N CH

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N04HD/D Designer's Data Sheet MMDF3N04HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process. These 3.4 AMPERES mini

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N03HD/D Designer's Data Sheet MMDF3N03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS MiniMOS devices are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density HDTMOS process. 4.1 AMPERES These min

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3207/D Product Preview MMDF3207 Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET WaveFET devices are an advanced series of power MOSFETs which utilize Motorola s 7.8 AMPERES latest MOSFET technology process to achieve the lowes

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3200Z/D Product Preview MMDF3200Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET WaveFET devices are an advanced series of power MOSFETs which utilize Motorola s 11.5 AMPERES latest MOSFET technology process to achieve the lo

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3N06HD/D Advance Information MMDF3N06HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS Dual HDTMOS are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density TMOS process. These 60 VOLTS miniature surface mou

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMDF3304/D Product Preview MMDF3304 Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET WaveFET devices are an advanced series of power MOSFETs which utilize Motorola s 7.3 AMPERES latest MOSFET technology process to achieve the lowes

MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. 3 AMPERES, 20 VOLTS MiniMOSt devices ar

MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding http //onsemi.com high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These 3 AMPERES, 20 VOLTS devices are designed for use in

MMDF3N04HD Preferred Device Power MOSFET 3 Amps, 40 Volts N-Channel SO-8, Dual These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source http //onsemi.com diode has a very low reverse recovery time. MiniMOSt devices are designed for use in

MMDF3N04HD www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann