All MOSFET. N3PF06 Datasheet

 

N3PF06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: N3PF06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 4.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055(typ) Ohm
   Package: SOT223

 N3PF06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

N3PF06 Datasheet (PDF)

 ..1. Size:1492K  cn vbsemi
 n3pf06.pdf

N3PF06 N3PF06

N3PF06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter

 0.1. Size:255K  st
 stn3pf06.pdf

N3PF06 N3PF06

STN3PF06P-channel 60 V - 0.20 - 2.5 A - SOT-223STripFET II Power MOSFETFeaturesRDS(on) Type VDSS IDmax2STN3PF06 60 V

 0.2. Size:778K  cn vbsemi
 stn3pf06.pdf

N3PF06 N3PF06

STN3PF06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramet

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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