All MOSFET. FDB029N06 Equivalents Search

 

FDB029N06 Spec and Replacement


   Type Designator: FDB029N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 193 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
   Package: TO263 D2PAK

 FDB029N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB029N06 Specs

 ..1. Size:505K  fairchild semi
fdb029n06.pdf pdf_icon

FDB029N06

June 2009 FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance. ... See More ⇒

 ..2. Size:671K  onsemi
fdb029n06.pdf pdf_icon

FDB029N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 9.1. Size:675K  fairchild semi
fdb024n08bl7.pdf pdf_icon

FDB029N06

June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance. ... See More ⇒

 9.2. Size:614K  fairchild semi
fdb024n06.pdf pdf_icon

FDB029N06

July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p... See More ⇒

Detailed specifications: FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , 50N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0F085 , FDB047N10 .

History: IRFB4110

Keywords - FDB029N06 MOSFET specs

 FDB029N06 cross reference
 FDB029N06 equivalent finder
 FDB029N06 lookup
 FDB029N06 substitution
 FDB029N06 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.