FDB029N06 - описание и поиск аналогов

 

FDB029N06. Аналоги и основные параметры

Наименование производителя: FDB029N06

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 231 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 193 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm

Тип корпуса: TO263 D2PAK

Аналог (замена) для FDB029N06

- подборⓘ MOSFET транзистора по параметрам

 

FDB029N06 даташит

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fdb029n06.pdfpdf_icon

FDB029N06

June 2009 FDB029N06 N-Channel PowerTrench MOSFET 60V, 193A, 3.1m Features Description RDS(on) = 2.4m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

 ..2. Size:671K  onsemi
fdb029n06.pdfpdf_icon

FDB029N06

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:675K  fairchild semi
fdb024n08bl7.pdfpdf_icon

FDB029N06

June 2014 FDB024N08BL7 N-Channel PowerTrench MOSFET 80 V, 229 A, 2.4 m Features Description RDS(on) = 1.7 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Low FOM RDS(on) *QG tailored to minimize the on-state resistance while maintaining superior switching performance.

 9.2. Size:614K  fairchild semi
fdb024n06.pdfpdf_icon

FDB029N06

July 2008 FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4m Features General Description RDS(on) = 1.8m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

Другие MOSFET... FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 , 50N06 , FDB031N08 , FDB035AN06A0 , FDB035N10A , STU407D , FDB039N06 , FDB045AN08A0 , FDB045AN08A0F085 , FDB047N10 .

History: QM1830M3 | IRFH5020PBF | AON6294 | HFP13N50

 

 

 

 

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