NDS332P-NL MOSFET Datasheet: P-Ch, 20V, 4.5A. Full specification with pinout and replacement list

NDS332P-NL Specs and Replacement

   Type Designator: NDS332P-NL
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SOT23

NDS332P-NL substitution

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NDS332P-NL datasheet

..1. Size:869K cn vbsemi
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NDS332P-NL www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

7.1. Size:84K fairchild semi
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June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 V These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V. cell density, DMOS technology. This very high density process is Very ... See More ⇒

9.1. Size:62K fairchild semi
nds336p.pdf pdf_icon

June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 V field effect transistors are produced using Fairchild's RDS(ON) = 0.2 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high Very low level ... See More ⇒

9.2. Size:62K fairchild semi
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July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N -Channel logic level enhancement mode power field 1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V. high cell density, DMOS technology. This very high density process is espec... See More ⇒