NDS332P-NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NDS332P-NL
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035(typ) Ohm
Тип корпуса: SOT23
Аналог (замена) для NDS332P-NL
NDS332P-NL Datasheet (PDF)
nds332p-nl.pdf
NDS332P-NLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
nds332p.pdf
June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features-1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 VThese P-Channel logic level enhancement mode power fieldeffect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V.cell density, DMOS technology. This very high density process isVery
nds336p.pdf
June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesSuperSOTTM-3 P-Channel logic level enhancement mode power -1.2 A, -20 V, RDS(ON) = 0.27 @ VGS= -2.7 Vfield effect transistors are produced using Fairchild'sRDS(ON) = 0.2 @ VGS = -4.5 V.proprietary, high cell density, DMOS technology. This very highVery low level
nds335n.pdf
July 1996 NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N -Channel logic level enhancement mode power field1.7 A, 20 V. RDS(ON) = 0.14 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.11 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is espec
nds331n.pdf
July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS= 4.5 V.high cell density, DMOS technology. This very high densityprocess is especia
nds336p.pdf
NDS336Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
nds331n-nl.pdf
NDS331N-NLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918