All MOSFET. NTMD3P03R2G Datasheet

 

NTMD3P03R2G Datasheet and Replacement


   Type Designator: NTMD3P03R2G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(typ) Ohm
   Package: SO8
 

 NTMD3P03R2G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTMD3P03R2G Datasheet (PDF)

 ..1. Size:868K  cn vbsemi
ntmd3p03r2g.pdf pdf_icon

NTMD3P03R2G

NTMD3P03R2Gwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top

 4.1. Size:146K  onsemi
ntmd3p03r2.pdf pdf_icon

NTMD3P03R2G

NTMD3P03R2Power MOSFET-3.05 Amps, -30 VoltsDual P-Channel SOIC-8Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http://onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft RecoveryVDSS RDS(ON) Typ ID Max IDSS Specified at Elevated Temperature Avala

 6.1. Size:110K  onsemi
ntmd3p03 nvmd3p03.pdf pdf_icon

NTMD3P03R2G

NTMD3P03, NVMD3P03Power MOSFET-3.05 Amps, -30 VoltsDual P-Channel SOIC-8Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on)http://onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated TemperatureVDSS RDS(ON) Typ ID Max

 9.1. Size:159K  onsemi
ntmd3n08lr2.pdf pdf_icon

NTMD3P03R2G

NTMD3N08LR2Power MOSFET2.3 Amps, 80 VoltsN-Channel Enhancement-ModeSO-8 Dual Packagehttp://onsemi.comFeatures Ultra Low On-Resistance Provides Higher Efficiency2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutio

Datasheet: NTD2955VT4G , NTD4860NT4G , NTD5807NT , NTD5865NL-1G , NTD5865NLT4G , NTD6416ANT , NTE4153NT1G , NTF3055-100T , EMB04N03H , NTR0202PLT1G , NTR4502PT1G , NTS2101PT1G , NTS4101PT1G , P0603BVG , P120NF10 , P60NF06 , P80NF55-08 .

History: NTD6416ANT

Keywords - NTMD3P03R2G MOSFET datasheet

 NTMD3P03R2G cross reference
 NTMD3P03R2G equivalent finder
 NTMD3P03R2G lookup
 NTMD3P03R2G substitution
 NTMD3P03R2G replacement

 

 
Back to Top

 


 
.