NTMD3P03R2G - аналоги, параметры транзистора - Справочник транзисторов

NTMD3P03R2G даташит

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NTMD3P03R2G www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top

4.1. Size:146K onsemi
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NTMD3P03R2 Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8 Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http //onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery VDSS RDS(ON) Typ ID Max IDSS Specified at Elevated Temperature Avala

6.1. Size:110K onsemi
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NTMD3P03, NVMD3P03 Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8 Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http //onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature VDSS RDS(ON) Typ ID Max

9.1. Size:159K onsemi
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NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http //onsemi.com Features Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutio

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