All MOSFET. P80NF55-08 Datasheet

 

P80NF55-08 Datasheet and Replacement


   Type Designator: P80NF55-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 570 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005(typ) Ohm
   Package: TO220AB
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P80NF55-08 Datasheet (PDF)

 ..1. Size:830K  cn vbsemi
 p80nf55-08.pdf pdf_icon

P80NF55-08

P80NF55-08www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

 0.1. Size:362K  st
 stb80nf55-08t4 stp80nf55-08 stw80nf55-08.pdf pdf_icon

P80NF55-08

STB80NF55-08T4STP80NF55-08, STW80NF55-08N-channel 55 V, 0.0065 , 80 A, TO-220, D2PAK, TO-247STripFET Power MOSFETFeaturesRDS(on) Type VDSS IDmax3STB80NF55-08T4 55 V

 5.1. Size:447K  st
 stb80nf55-06 stb80nf55-06-1 stp80nf55-06 stp80nf55-06fp.pdf pdf_icon

P80NF55-08

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

 5.2. Size:437K  st
 stb80nf55-06-1 stb80nf55-06t4 stp80nf55-06fp.pdf pdf_icon

P80NF55-08

STB80NF55-06 - STB80NF55-06-1STP80NF55-06 - STP80NF55-06FPN-channel 55V - 0.005 - 80A - TO-220 /FP - I2PAK - D2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB80NF55-06 55V

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History: CHM85A3PAGP | TK7P65W | SFFX054Z

Keywords - P80NF55-08 MOSFET datasheet

 P80NF55-08 cross reference
 P80NF55-08 equivalent finder
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